Effect of slow electrons on the field dependences of the Hall coefficient for Cd{sub x}Hg{sub 1-x}Te alloys at T = 77 K
- Giredmet Federal State Unitary Enterprise (Russian Federation)
An algorithm which allows one to determine the statistic weights and mobilities of free carriers by fitting the calculated dependence of the Hall coefficient on the magnetic field induction R(B) to the experimental data is developed. The model is used for description of the dependences R(B) obtained for the Cd{sub x}Hg{sub 1-x}Te (x {approx} 0.2) alloy at liquid-nitrogen temperature. It is shown that the experimental data are satisfactorily described by a model which implies the presence of fast and slow electrons in the sample. It is found that the heavier the dependence R(B), the higher the contribution of slow electrons.
- OSTI ID:
- 21087977
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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