Variation in optical-absorption edge in SiN{sub x} layers with silicon clusters

Journal Article · Fri Feb 15 04:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1007/S11453-008-2015-8· OSTI ID:21087925

Volodin, V A; Marin, D V; Arzhannikova, S A; Kamaev, G N; Kochubei, S A ^[1]; Popov, A A ^[2]

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1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
2. Russian Academy of Sciences, Institute of Microelectronics and Informatics (Russian Federation)

Using optical methods, data on optical constants are obtained for silicon nitride films synthesized by plasma-chemical vapor deposition (PCVD). Models for calculating the permittivity in the model of inhomogeneous phase mixture of silicon and silicon nitride are considered. It is found that the optical-absorption edge (E{sub g}) and the photoluminescence peak shift to longer wavelengths with increasing nitrogen atomic fraction x in sin{sub x} films. When x approaches the value 4/3 characteristic for stoichiometric silicon nitride Si{sub 3}N{sub 4}, a nonlinear sharp increase in E{sub g} is observed. Using Raman scattering, Si-Si bonds are revealed, which confirms the direct formation of silicon clusters during the film deposition. The relation between the composition of nonstoichiometric silicon nitride films, values of permittivity, and the optical-band width is established for light transmission.

• OSTI ID: 21087925
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
CHEMICAL VAPOR DEPOSITION
FILMS
LAYERS
LIGHT TRANSMISSION
PERMITTIVITY
PHOTOLUMINESCENCE
RAMAN EFFECT
SILICON
SILICON NITRIDES