Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition
- Lobachevsky State University, Research Physicotechnical Institute (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Lobachevsky State University (Russian Federation)
Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.
- OSTI ID:
- 21075629
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 106, Issue 1; Other Information: DOI: 10.1007/s11447-008-1008-1; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMIC FORCE MICROSCOPY
CARRIER MOBILITY
CHALCOGENIDES
CHROMIUM COMPOUNDS
COPPER COMPOUNDS
CURIE POINT
DEPOSITION
DOPED MATERIALS
FERROMAGNETIC RESONANCE
FERROMAGNETISM
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GERMANIUM
HALL EFFECT
INDIUM ANTIMONIDES
IRON
KERR EFFECT
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETO-OPTICAL EFFECTS
MANGANESE
MONOCRYSTALS
SILICON
SOLID SOLUTIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K