skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy. [GaSb; InSb]

Journal Article · · Physiol. Rev.; (United States)
OSTI ID:6426017

A comprehensive survey of the total valence-band x-ray-photoemission spectra of 14 semiconductors is reported: cubic GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, CdTe, and HgTe, hexagonal ZnO, CdS, and CdSe. The binding energies of the outermost d shells were determined relative both to the top of the valence bands (E;sup V;sub B;) and to the Fermi level of a thin layer of gold that was vapor deposited after each run (E;sup F;sub B;). The Fermi level fell near the center of the gap for six samples, near the top for two, and near the bottom for three. Evidence for an apparent increase in core d-level spin-orbit slitting over free-atom values was interpreted as a possible spreading of a ..gamma../sub 7/ and a ..gamma../sub 8/ level from the upper (d /sub 3///sub 2/) ..gamma../sub 8/ level by a tetrahedral crystal field. The s, p valence-band spectra showed three main peaks, wth considerable structure on the ''least-bound'' peak. Characteristic binding energies of spectral features in I'(E) are tabulated. The energies of the characteristic symmetry points L/sub 3/, X/sub 5/, W/sub 2/ ..sigma..;sup min 1;, W/sub 1/, X/sub 3/(L/sub 1/), X/sub 1/, L/sub 1/, and ..gamma../sub 1/ for the 11 cubic compounds are compared with UPS and theoretical band-structure results. The energies calculated using the relativistic-orthogonalized-plane-wave approach with X;sub infinityBETA; exchange agree very well with experiment, on the whole. The desities of states calculated using the empirical-psuedopotenital method provided a useful basis for relating features in I'(E) to energies of the characteristic symmetry points. 21 tables, 16 figures

Research Organization:
Univ. of California, Berkeley
OSTI ID:
6426017
Journal Information:
Physiol. Rev.; (United States), Vol. 9:2
Country of Publication:
United States
Language:
English

Similar Records

Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
Journal Article · Mon Sep 07 00:00:00 EDT 2015 · Journal of Applied Physics · OSTI ID:6426017

Electronic structure and stability of II--VI semiconductors and their alloys: The role of metal d bands
Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Vac. Sci. Technol., A; (United States) · OSTI ID:6426017

X-ray emission and photoelectron spectra of Pr{sub 0.5}Sr{sub 0.5}MnO{sub 3}
Journal Article · Sat May 01 00:00:00 EDT 1999 · Physical Review, B: Condensed Matter · OSTI ID:6426017