Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy. [GaSb; InSb]
A comprehensive survey of the total valence-band x-ray-photoemission spectra of 14 semiconductors is reported: cubic GaP, GaAs, GaSb, InP, InAs, InSb, ZnS, ZnSe, ZnTe, CdTe, and HgTe, hexagonal ZnO, CdS, and CdSe. The binding energies of the outermost d shells were determined relative both to the top of the valence bands (E;sup V;sub B;) and to the Fermi level of a thin layer of gold that was vapor deposited after each run (E;sup F;sub B;). The Fermi level fell near the center of the gap for six samples, near the top for two, and near the bottom for three. Evidence for an apparent increase in core d-level spin-orbit slitting over free-atom values was interpreted as a possible spreading of a ..gamma../sub 7/ and a ..gamma../sub 8/ level from the upper (d /sub 3///sub 2/) ..gamma../sub 8/ level by a tetrahedral crystal field. The s, p valence-band spectra showed three main peaks, wth considerable structure on the ''least-bound'' peak. Characteristic binding energies of spectral features in I'(E) are tabulated. The energies of the characteristic symmetry points L/sub 3/, X/sub 5/, W/sub 2/ ..sigma..;sup min 1;, W/sub 1/, X/sub 3/(L/sub 1/), X/sub 1/, L/sub 1/, and ..gamma../sub 1/ for the 11 cubic compounds are compared with UPS and theoretical band-structure results. The energies calculated using the relativistic-orthogonalized-plane-wave approach with X;sub infinityBETA; exchange agree very well with experiment, on the whole. The desities of states calculated using the empirical-psuedopotenital method provided a useful basis for relating features in I'(E) to energies of the characteristic symmetry points. 21 tables, 16 figures
- Research Organization:
- Univ. of California, Berkeley
- OSTI ID:
- 6426017
- Journal Information:
- Physiol. Rev.; (United States), Vol. 9:2
- Country of Publication:
- United States
- Language:
- English
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ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
74 ATOMIC AND MOLECULAR PHYSICS
ANTIMONY ALLOYS
ELECTRONIC STRUCTURE
CADMIUM SELENIDES
CADMIUM SULFIDES
CADMIUM TELLURIDES
GALLIUM ALLOYS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ALLOYS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MERCURY TELLURIDES
ZINC OXIDES
ZINC SELENIDES
ZINC SULFIDES
ZINC TELLURIDES
BINDING ENERGY
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TABLES
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
DATA FORMS
ENERGY
GALLIUM COMPOUNDS
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INFORMATION
INORGANIC PHOSPHORS
MERCURY COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
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PHOSPHORUS COMPOUNDS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SULFIDES
SULFUR COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
400201* - Chemical & Physicochemical Properties
640302 - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory