Bottom electrodes dependence of microstructures and dielectric properties of compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} thin films

Journal Article · Tue Mar 04 04:00:00 EST 2008 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2007.03.028· OSTI ID:21068222

Jinzhao, Wang; Baishun, Zhang; Juan, Jiang; Runkun, Pan; Jun, Wang ^[1]

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1. Department of Materials Science and Engineering, Hubei University, Wuhan (China)

Compositionally graded (Ba{sub 1-x}Sr{sub x})TiO{sub 3} (BST) thin films, with x decreasing from 0.3 to 0, were deposited on Pt/Ti/SiO{sub 2}/Si and Ru/SiO{sub 2}/Si substrates by radio frequency magnetron sputtering technology. The microstructure and dielectric properties of the graded BST thin films were investigated. It was found that the films on Ru electrode have better crystallization, and that RuO{sub 2} is present between the Ru bottom electrode and the graded BST thin films by X-ray diffraction and SEM analysis. Dielectric measurement reveals that the graded BST thin films deposited on Ru bottom electrode have higher dielectric constant and tunability. The enhanced dielectric behavior is attributed to better crystallization as well as smaller space charge capacitance width and the formation of RuO{sub 2} that is more compatible with the BST films. The graded BST films on Ru electrode show higher leakage current due to lower barrier height and rougher surface of bottom electrode.

• OSTI ID: 21068222
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 3 Vol. 43; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CRYSTALLIZATION
DIELECTRIC MATERIALS
ELECTRODES
LEAKAGE CURRENT
MAGNETRONS
MICROSTRUCTURE
PERMITTIVITY
RADIOWAVE RADIATION
RUTHENIUM OXIDES
SCANNING ELECTRON MICROSCOPY
SILICON OXIDES
SPACE CHARGE
SPUTTERING
STRONTIUM COMPOUNDS
THIN FILMS
TITANATES
TITANIUM OXIDES
X-RAY DIFFRACTION