Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

Journal Article · Mon Dec 31 23:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2829814· OSTI ID:21064497

Lee, M J; Park, Y; Ahn, S E; Kang, B S; Lee, C B; Kim, K H; Xianyu, W X; Yoo, I K; Lee, J H; Chung, S J; Kim, Y H; Lee, C S; Choi, K N; Chung, K S ^[1]

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1. Semiconductor Device Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-Do 446-712 (Korea, Republic of)

In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation.

• OSTI ID: 21064497
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
MAGNETIC STORAGE DEVICES
NICKEL OXIDES
SPUTTERING
THIN FILMS
TITANIUM
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY