Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures

Journal Article · Sat Dec 01 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2817255· OSTI ID:21064479

Zhang, J P; Zhang, L D; Zhu, L Q; Zhang, Y; Liu, M; Wang, X J; He, G ^[1]

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1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm{sup -1}. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 deg. C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A{sup 0}X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N){sub O} and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.

• OSTI ID: 21064479
• Journal Information: Journal of Applied Physics, Vol. 102, Issue 11; Other Information: DOI: 10.1063/1.2817255; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL STATE
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
ELLIPSOMETRY
NANOSTRUCTURES
NITRIDES
NITROGEN
PHOTOLUMINESCENCE
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC
ZINC OXIDES