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Title: Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures

Abstract

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm{sup -1}. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 deg. C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A{sup 0}X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N){sub O} and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
  2. (Japan)
Publication Date:
OSTI Identifier:
21064479
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 102; Journal Issue: 11; Other Information: DOI: 10.1063/1.2817255; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CHEMICAL STATE; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; ELLIPSOMETRY; NANOSTRUCTURES; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDES

Citation Formats

Zhang, J. P., Zhang, L. D., Zhu, L. Q., Zhang, Y., Liu, M., Wang, X. J., He, G., and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures. United States: N. p., 2007. Web. doi:10.1063/1.2817255.
Zhang, J. P., Zhang, L. D., Zhu, L. Q., Zhang, Y., Liu, M., Wang, X. J., He, G., & Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures. United States. doi:10.1063/1.2817255.
Zhang, J. P., Zhang, L. D., Zhu, L. Q., Zhang, Y., Liu, M., Wang, X. J., He, G., and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656. Sat . "Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures". United States. doi:10.1063/1.2817255.
@article{osti_21064479,
title = {Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures},
author = {Zhang, J. P. and Zhang, L. D. and Zhu, L. Q. and Zhang, Y. and Liu, M. and Wang, X. J. and He, G. and Department of Applied Chemistry, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656},
abstractNote = {N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm{sup -1}. According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 deg. C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A{sup 0}X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N){sub O} and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed.},
doi = {10.1063/1.2817255},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 102,
place = {United States},
year = {2007},
month = {12}
}