Fabrication and characterization of tin-based nanocrystals

Journal Article · Sat Dec 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2817902· OSTI ID:21064476

Shujuan, Huang; Cho, Eun-Chel; Conibeer, Gavin; Green, Martin A; Bellet, Daniel; Bellet-Amalric, Edith; Shuying, Cheng ^[1]

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1. ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia)

Sn-based nanocrystals were prepared by depositing Sn-rich SiO{sub 2} films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO{sub 2} matrix at relatively low annealing temperature of 400 deg. C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4{+-}0.6 nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2-4.4 eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.

• OSTI ID: 21064476
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ANNEALING
CRYSTAL DEFECTS
DEPOSITION
EV RANGE 01-10
FILMS
NANOSTRUCTURES
OXIDATION
OXYGEN
SILICON OXIDES
SPUTTERING
TIN
TRANSMISSION ELECTRON MICROSCOPY
ULTRAVIOLET SPECTRA
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY