Effect of swift heavy ion irradiation on deep levels in Au/n-Si (100) Schottky diode studied by deep level transient spectroscopy

Journal Article · Sat Dec 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2821366· OSTI ID:21064470

Kumar, Sandeep; Katharria, Y S; Kumar, Sugam; Kanjilal, D ^[1]

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1. Inter-University Accelerator Centre, P.O. Box-10502, New Delhi 110 067 (India)

In situ deep level transient spectroscopy has been applied to investigate the influence of 100 MeV Si{sup 7+} ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5x10{sup 9} to 1x10{sup 12} ions cm{sup -2}. The swift heavy ion irradiation introduces a deep level at E{sub c}-0.32 eV. It is found that initially, trap level concentration of the energy level at E{sub c}-0.40 eV increases with irradiation up to a fluence value of 1x10{sup 10} cm{sup -2} while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5x10{sup 10} cm{sup -2}. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

• OSTI ID: 21064470
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ENERGY TRANSFER
GOLD ALLOYS
HEAVY IONS
ION BEAMS
IRRADIATION
MEV RANGE 10-100
MILLI EV RANGE
MULTICHARGED IONS
PHYSICAL RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SILICON ALLOYS
SILICON IONS