Semiconducting properties of zinc-doped cubic boron nitride thin films

Journal Article · Sat Sep 15 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2783983· OSTI ID:21062096

Nose, K; Yoshida, T ^[1]

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1. Department of Materials Engineering, Faculty of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

We have examined the electronic properties of zinc-doped cubic boron nitride (cBN) thin films prepared by sputter deposition. The electric conductivity of films deposited in pure Ar increased as the concentration of zinc dopant increased, and hole conduction was identified by the measurement of thermoelectric currents. It was also found that the conductivity increment in such films was accompanied by a linear increase in the B/(B+N) ratio. At the same time, no modification of the composition and the conductivity by incorporated zinc was observed when film growth took place in presence of nitrogen gas. The effect of the excess boron on the conductivity emerged only when films show semi-insulating behavior. These results suggest that Zn substitution for nitrogen causes high electric conductivity of cBN. The electric contact between Ti electrode and semiconducting cBN was examined by the transfer length method, and Ohmic conduction was observed in the Ti/cBN contact. The specific contact resistance was affected by the specific resistance of cBN films, and it was reduced from 10{sup 5} to 100 {omega} cm{sup 2} by increasing the concentration of incorporated Zn.

• OSTI ID: 21062096
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
BORON NITRIDES
CRYSTAL GROWTH
CUBIC LATTICES
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRODES
HOLES
NITROGEN
SEMICONDUCTOR MATERIALS
SPUTTERING
THERMOELECTRICITY
THIN FILMS
TITANIUM
ZINC