Influence of defects and processing parameters on the properties of indium tin oxide films on polyethylene napthalate substrate

Journal Article · Sat Sep 15 00:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2783952· OSTI ID:21062095

Han, H; Zoo, Yeongseok; Bhagat, S K; Lewis, J S; Alford, T L ^[1]

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1. School of Materials, Arizona State University, Tempe, Arizona 85287-8706 (United States)

Indium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 deg. C). Selected PEN substrates were pretreated using an Ar plasma before ITO sputter deposition. Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electrical and optical properties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

• OSTI ID: 21062095
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 102; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTALLIZATION
ELECTRIC CONDUCTIVITY
HALL EFFECT
INDIUM OXIDES
OPTICAL PROPERTIES
POLYETHYLENES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
SURFACE COATING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TIN OXIDES