Evidence of a New Hydrogen Complex in Dilute Nitride Alloys
- MATIS-INFM-CNR, via Marzolo 8, 35131 Padova (Italy)
- CNISM, Universita di Roma 'La Sapienza', P.le A. Moro 2, 00185 Rome (Italy)
- Department of Physics and Material Science, Philipps University, Renthof 5, D-35032 Marburg (Germany)
- Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km 163.5, 34012 Trieste (Italy)
By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAs1-xNx/GaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electronically passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAs1-xNx/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs1-xNx/GaAs.
- OSTI ID:
- 21055047
- Journal Information:
- AIP Conference Proceedings, Vol. 893, Issue 1; Conference: ICPS 2006: 28. international conference on the physics of semiconductors, Vienna (Austria), 24-28 Jul 2006; Other Information: DOI: 10.1063/1.2729816; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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