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Title: Novel Preparation Methods for the Fabrication of Thin-Film EXAFS Samples

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.2644701· OSTI ID:21054776
; ; ;  [1];  [2]
  1. Department of Electronic Materials Engineering, Australian National University, Canberra (Australia)
  2. Australian Synchrotron Research Program, Australian Nuclear Science and Technology Organisation, Menai (Australia)

Thin-film EXAFS samples have been fabricated using semiconductor-processing and wet-chemical etching techniques to eliminate artifacts associated with transmission and fluorescence measurements. Examples include crystalline GexSi1-x alloys, amorphous GaAs and Cu and Au nanocrystals in SiO2. In general, thin films of several microns thickness were first formed on bulk substrates then EXAFS samples were fabricated by separating the thin film and substrate. For transmission measurements, thin films were stacked together to yield the optimum absorption while sample inhomogeneity, non-uniformity and non-continuity were readily eliminated. For fluorescence measurements, scattering/diffraction from the substrate was eliminated and stacking the thin films together increased the areal concentration of the absorber. The use of such techniques to fabricate EXAFS samples yielded a significant increase in accessible photo-electron wave number range and hence more accurate structural parameter determinations.

OSTI ID:
21054776
Journal Information:
AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644701; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English