EXAFS Analysis of the Local Structure of GexSi1-x Thin Film Alloys

Journal Article · Fri Feb 02 00:00:00 EST 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2644594· OSTI ID:21054683

Sung, Narkeon ^[1]; Yoo, Yong-Goo ^[2]; Yang, Dong-Seok ^[3]

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1. Beamline Research Division, Pohang Accelerator Laboratory, POSTECH, 790-784 (Korea, Republic of)
2. Electronic and Telecommunications Research Institute, Daejeon, 305-350 (Korea, Republic of)
3. Physics Division, School of Science Education, Chungbuk National University, Cheongju, 361-763 (Korea, Republic of)

In this work we analyzed the local structure of GexSi1-x (x = 0.5 and 0.8) ultra thin film alloys deposited on silicon substrate. The local structural parameters for the thin films were compared to the values for a bulk sample. The coordination numbers for the thin films were similar to the value of a bulk sample but the interatomic distances were different. Also, the use of a germanium solid state detector was important for EXAFS analysis of ultra thin film alloys.

• OSTI ID: 21054683
• Journal Information: AIP Conference Proceedings, Vol. 882, Issue 1; Conference: XAFS13: 13. international conference on X-ray absorption fine structure, Stanford, CA (United States), 9-14 Jul 2006; Other Information: DOI: 10.1063/1.2644594; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CONCENTRATION RATIO
CRYSTAL STRUCTURE
FINE STRUCTURE
GERMANIUM
GERMANIUM ALLOYS
INTERATOMIC DISTANCES
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SOLIDS
SUBSTRATES
THIN FILMS
X-RAY SPECTROSCOPY