Raman scattering as a tool for the evaluation of strain in GaN/AlN quantum dots: The effect of capping
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Materials Science Institute, University of Valencia, P.O. Box 22085, 46071 Valencia (Spain)
- CEA-CNRS Group, 'Nanophysique et Semiconducteurs', DRFMC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
- Laboratoire des Materiaux et du Genie Physique, UMR5628 CNRS-INPG, INP Grenoble-MINATEC, 3 Parvis L. Neel, 38016 Grenoble Cedex 9 (France)
The strain state of GaN/AlN quantum dots grown on 6H-SiC has been investigated as a function of AlN capping thickness by three different techniques. On the one hand, resonant Raman scattering allowed the detection of the A{sub 1}(LO) quasiconfined mode. It was found that its frequency increases with AlN deposition, while its linewidth did not evolve significantly. Available experiments of multiwavelength anomalous diffraction and diffraction anomalous fine structure on the same samples provided the determination of the wurtzite lattice parameters a and c of the quantum dots. A very good agreement is found between resonant Raman scattering and x-ray measurements, especially concerning the in-plane strain state. The results demonstrate the adequacy of Raman scattering, in combination with the deformation potential and biaxial approximations, to determine quantitatively values of strain in GaN quantum dot layers.
- OSTI ID:
- 21052732
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 76; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
Similar Records
In situ resonant x-ray study of vertical correlation and capping effects during GaN/AlN quantum dot growth
Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure
Bound exciton energies, biaxial strains, and defect microstructures in GaN/AlN/6H-SiC(0001) heterostructures
Journal Article
·
Mon Apr 10 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20778909
Step-by-step capping and strain state of GaN/AlN quantum dots studied by grazing-incidence diffraction anomalous fine structure
Journal Article
·
Mon May 15 00:00:00 EDT 2006
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:20788192
Bound exciton energies, biaxial strains, and defect microstructures in GaN/AlN/6H-SiC(0001) heterostructures
Book
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:585837