In situ resonant x-ray study of vertical correlation and capping effects during GaN/AlN quantum dot growth

Journal Article · Mon Apr 10 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2192572· OSTI ID:20778909

Coraux, J; Renevier, H; Favre-Nicolin, V; Renaud, G; Daudin, B ^[1]

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1. DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France) and Universite Joseph Fourier, BP 53, F-38041 Grenoble Cedex 9 (France)

Grazing incidence anomalous x-ray scattering was used to monitor in situ the molecular beam epitaxy growth of GaN/AlN quantum dots (QDs). The strain state was studied by means of grazing incidence multiwavelength anomalous diffraction (MAD) in both the QDs and the AlN during the progressive coverage of QDs by AlN monolayers. Vertical correlation in the position of the GaN QDs was also studied by both grazing incidence MAD and anomalous grazing incidence small angle scattering as a function of the number of GaN planes and of the AlN spacer thickness. In a regime where the GaN QDs and the AlN capping are mutually strain influenced, a vertical correlation in the position of QDs is found with as a side effect an average increase in the QD width.

• OSTI ID: 20778909
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 88; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CORRELATIONS
CRYSTAL GROWTH
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SMALL ANGLE SCATTERING
THICKNESS
X-RAY DIFFRACTION