Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study

Journal Article · Wed Nov 15 04:00:00 EST 2006 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.74.195302· OSTI ID:20853885

Coraux, J; Amstatt, B; Budagoski, J A; Bellet-Amalric, E; Rouviere, Jean-Luc; Favre-Nicolin, V; Renevier, H; Daudin, B ^[1]; Proietti, M G ^[2]

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1. Department of Fundamental Research on Condensed Matter, CEA/Grenoble, 17 rue des Martyrs, 38054-Grenoble cedex 9 (France)
2. Departamento Fisica de la Materia Condensada-ICMA - Centro Politecnico Superior, Universidad de Zaragoza, C. Maria de Luna 3, 50015 Zaragoza (Spain)

Capping of GaN quantum dots with AlN has been studied at the monolayer scale by combining atomic force microscopy, high resolution electron microscopy, and grazing incidence x-ray anomalous diffraction. Consistent with the results provided by these three techniques, it has been demonstrated that, following a wetting of the dots by an AlN layer up to 4 ML coverage, subsequent capping is dominated by a preferential AlN growth in between the dots, eventually resulting in a complete smoothing of AlN. Interdiffusion has been shown to be negligible during this process, which makes the GaN/AlN system unique among semiconductors.

• OSTI ID: 20853885
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 19 Vol. 74; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ATOMIC FORCE MICROSCOPY
ELECTRON MICROSCOPY
GALLIUM NITRIDES
LAYERS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION