Thermoelectric properties of Cu-doped n-type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1}(x=0-0.2) alloys
- College of Chemical Engineering and Materials Science, Zhejiang University of Technology, Hangzhou 310014 (China)
- School of Mechanical Engineering, Ningbo University of Technology, Ningbo 315016 (China)
- School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221008 (China)
n-Type (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Cu{sub x}Se{sub 3}){sub 0.1} (x=0-0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu{sub 2.86}Te{sub 2} precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x{<=}0.1) can reduce the lattice thermal conductivity ({kappa}{sub L}), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi{sub 2}Se{sub 0.3}Te{sub 2.7} (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies. - Graphical abstract: After Cu-doping with x=0.1, the highest ZT value of 0.98 is obtained at 417 K, which is about 0.32 and 0.12 higher than those of Cu-free Bi{sub 2}Se{sub 0.3}Te{sub 2.7} and the Ag-doped alloys (Bi{sub 2}Te{sub 3}){sub 0.9}-(Bi{sub 2-x}Ag{sub x}Se{sub 3}){sub 0.1} (x=0.4), respectively.
- OSTI ID:
- 21043791
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Journal Issue: 12 Vol. 180; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
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