Spin-polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions

Journal Article · Wed Sep 26 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2799421· OSTI ID:21032728

Wenyong, Wang; Richter, Curt A ^[1]

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1. Semiconductor Electronics Division, National Institute of Standards and Technology, 100 Bureau Drive, M.S. 8120, Gaithersburg, Maryland 20899-8120 (United States)

In this study, we fabricate molecular magnetic tunnel junctions and demonstrate that inelastic electron tunneling spectroscopy technique can be utilized to inspect such junctions to investigate the existence of desired molecular species in the device area. Tunneling magnetoresistance measurements have been carried out and spin-dependent tunneling transport has been observed. Bias-dependence of the tunneling resistance has also been detected. IETS measurements at different magnetic field suggested that the TMR bias-dependence was likely caused by the inelastic scattering due to the molecular vibrations.

• OSTI ID: 21032728
• Journal Information: AIP Conference Proceedings, Vol. 931, Issue 1; Conference: 2007 international conference on frontiers of characterization and metrology, Gaithersburg, MD (United States), 27-29 Mar 2007; Other Information: DOI: 10.1063/1.2799421; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
ELECTRON SPECTROSCOPY
ELECTRONS
INELASTIC SCATTERING
MAGNETIC FIELDS
MAGNETORESISTANCE
POLARIZATION
SPIN ORIENTATION
SUPERCONDUCTING JUNCTIONS
TUNNEL EFFECT