C-V measurements of micron diameter metal-oxide-semiconductor capacitors using a scanning-electron-microscope-based nanoprobe

Journal Article · Mon Oct 15 00:00:00 EDT 2007 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.2789660· OSTI ID:21024449

Zheng, T; Jia, H; Wallace, R M; Gnade, B E ^[1]

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1. Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75083 (United States)

The C-V electrical characterization of microstructures on a standard probe station is limited by the magnification of the imaging system and the precision of the probe manipulators. To overcome these limitations, we examine the combination of in situ electrical probing and a dual column scanning electron microscope/focused ion beam system. The imaging parameters and probing procedures are carefully chosen to reduce e-beam damage to the metal oxide semiconductor capacitor device under test. Estimation of shunt capacitance is critical when making femtofarad level measurements. C-V measurements of micron size metal-oxide-silicon capacitors are demonstrated.

• OSTI ID: 21024449
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 10 Vol. 78; ISSN 0034-6748; ISSN RSINAK
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACCURACY
BYPASSES
CAPACITANCE
CAPACITORS
DAMAGE
ELECTRON BEAMS
ION BEAMS
MANIPULATORS
METALS
MICROSTRUCTURE
PROBES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES