Magnetron sputtering of Ti{sub 3}SiC{sub 2} thin films from a compound target

Journal Article · Sat Sep 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2757178· OSTI ID:21020872

Eklund, P; Beckers, M; Frodelius, J; Hoegberg, H; Hultman, L ^[1]

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1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology, IFM, Linkoeping University, S-581 83 Linkoeping (Sweden)

Ti{sub 3}SiC{sub 2} thin films were synthesized by magnetron sputtering from Ti{sub 3}SiC{sub 2} and Ti targets. Sputtering from a Ti{sub 3}SiC{sub 2} target alone resulted in films with a C content of {approx}50 at. % or more, due to gas-phase scattering processes and differences in angular and energy distributions between species ejected from the target. Addition of Ti to the deposition flux from a Ti{sub 3}SiC{sub 2} target is shown to bind the excess C in TiC{sub x} intergrown with Ti{sub 3}SiC{sub 2} and Ti{sub 4}SiC{sub 3}. Additionally, a substoichiometric TiC{sub x} buffer layer is shown to serve as a C sink and enable the growth of Ti{sub 3}SiC{sub 2}.

• OSTI ID: 21020872
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 5 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CARBON SINKS
ENERGY SPECTRA
LAYERS
MAGNETRONS
SCATTERING
SILICON COMPOUNDS
SPUTTERING
STOICHIOMETRY
SURFACE COATING
THIN FILMS
TITANIUM COMPOUNDS