Spectroscopic ellipsometry characterization of the optical properties and thermal stability of ZrO{sub 2} films made by ion-beam assisted deposition

Journal Article · Mon Jan 07 00:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2811955· OSTI ID:21016257

Ramana, C V; Utsunomiya, S; Ewing, R C; Becker, U; Atuchin, V V; Aliev, V Sh; Kruchinin, V N ^[1]

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1. Department of Geological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States) and Department of Metallurgical and Materials Engineering, University of Texas, El Paso, Texas 79968 (United States)

The optical properties, interface structure, and thermal stability of the ZrO{sub 2} films grown on Si(100) were investigated in detail. A 2 nm thick interfacial layer (IL) is formed at the ZrO{sub 2}-Si interface for the as-grown ZrO{sub 2}. The optical constants of ZrO{sub 2} films and IL correspond to amorphous-ZrO{sub 2} and amorphous-SiO{sub 2}, respectively. The oxidation and IL growth at 900 deg. C, as a function of annealing time, exhibit a two-step behavior with a slow and a fast growth-rate zones. The transition from a zone of slow to fast rate is attributed to structurally modified ZrO{sub 2} facilitating the faster oxygen transport to the ZrO{sub 2}/Si interface.

• OSTI ID: 21016257
• Journal Information: Applied Physics Letters, Vol. 92, Issue 1; Other Information: DOI: 10.1063/1.2811955; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DEPOSITION
ELLIPSOMETRY
FILMS
ION BEAMS
LAYERS
OPTICAL PROPERTIES
OXIDATION
OXYGEN
SILICON OXIDES
ZIRCONIUM OXIDES