Charge storage characteristics of Au nanocrystals embedded in high-k gate dielectrics on Si
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)
The charge storage characteristics of metal-oxide-semiconductor structures containing Au nanocrystals in atomic-layer-deposited high-k gate dielectrics were studied. Cross-sectional high-resolution transmission electron microscopy reveals that the Au nanocrystals are self-assembled in the high-k dielectric matrix after high temperature annealing in N{sub 2} ambient. The memory effect was observed from capacitance-voltage (C-V) relations and a satisfactory charge retention characteristic was obtained in the sample using Al{sub 2}O{sub 3} as the gate dielectric than in the one using Hf{sub 2}AlO{sub x}. Moreover, a saturation of electron storage in the metal-oxide-semiconductor capacitors was also observed.
- OSTI ID:
- 21016244
- Journal Information:
- Applied Physics Letters, Vol. 91, Issue 20; Other Information: DOI: 10.1063/1.2804567; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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