Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al{sub 2}O{sub 3} film as the tunnel and blocking oxides for nonvolatile memory applications

Journal Article · Sun Jan 15 00:00:00 EST 2012 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3639131· OSTI ID:22054129

Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag ^[1]

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1. Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

Remote plasma atomic layer deposited (RPALD) Al{sub 2}O{sub 3} films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al{sub 2}O{sub 3} film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si{sup +3} and Si{sup +4}, indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10{sup 4} s. These results indicate that Al{sub 2}O{sub 3} films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

• OSTI ID: 22054129
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 30, Issue 1; Other Information: (c) 2012 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ALUMINIUM OXIDES
CAPACITORS
CRYSTALS
DEPLETION LAYER
DEPOSITION
ELECTRIC POTENTIAL
GOLD
MEMORY DEVICES
NANOSTRUCTURES
OXIDATION
PLASMA
PROGRAMMING
SEMICONDUCTOR MATERIALS
SILICON IONS
THIN FILMS
TRAPS
TUNNEL EFFECT