Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.
- OSTI ID:
- 21016197
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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