Ge nitride formation in N-doped amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}

Journal Article · Mon Aug 20 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2773959· OSTI ID:21016176

Jung, M -C; Lee, Y M; Kim, H -D; Kim, M G; Shin, H J; Kim, K H; Song, S A; Jeong, H S; Ko, C H; Han, M ^[1]

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1. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

The chemical state of N in N-doped amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN{sub x}) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN{sub x} was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN{sub x}, rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature.

• OSTI ID: 21016176
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTRA
ABSORPTION SPECTROSCOPY
ANTIMONY COMPOUNDS
BINDING ENERGY
CHALCOGENIDES
DOPED MATERIALS
EV RANGE 10-100
GERMANIUM COMPOUNDS
GERMANIUM NITRIDES
GLASS
NITROGEN
TELLURIUM COMPOUNDS
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTRA
X-RAY SPECTROSCOPY