High-resolution x-ray photoelectron spectroscopy on oxygen-free amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}

Journal Article · Mon Jul 24 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2236216· OSTI ID:20860608

Jung, M -C; Shin, H J; Kim, K; Noh, J S; Chung, J ^[1]

---

1. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

Amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (a-GST) film, 100 nm thick, was grown by cosputtering from GeTe and Sb{sub 2}Te{sub 3} targets on a silicon wafer at room temperature. The native oxidized layer, which was formed in air and about 20 nm thick measured by secondary ion mass spectroscopy, was removed by Ne{sup +} ion sputtering for 1 h with 0.6 kV beam energy. Core-level spectra of the Te 3d and 4d, Sb 3d and 4d, and Ge 3d of the oxygen-free a-GST were obtained by high-resolution x-ray photoelectron spectroscopy with synchrotron radiation and compared with those from Ge and GeTe. The analysis implies that the a-GST is composed on the base of chemical states of GeTe.

• OSTI ID: 20860608
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
ANTIMONY TELLURIDES
CHEMICAL STATE
CRYSTAL GROWTH
DEPOSITION
GERMANIUM TELLURIDES
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
NEON IONS
OXYGEN
PHASE CHANGE MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SYNCHROTRON RADIATION
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY