Inelastic strain relaxation in the Ge quantum dot array
- Institute of Semiconductor Physics, Siberian Brunch of RAS, Lavrentyev Ave. 13, 630090 Novosibirsk (Russian Federation)
Raman spectra of Si/Ge/Si (100) structures with Ge quantum dots (QDs) obtained by means of the low-temperature (200-300 deg. C) molecular beam epitaxy are investigated. An extremely narrow Ge phonon line of the 'anomalously' high intensity and a doublet structure of the Ge-Si mode are observed. These features are explained by the formation of a pure pseudomorphic state of a QD array to a Si substrate. Additional broad Ge phonon lines related to inelastic strain relaxation are found under the variation of growth conditions. The observed strain relaxation is strongly nonuniform for the two well known mechanisms of inelastic strain relaxation.
- OSTI ID:
- 21016127
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 91; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Folded acoustic phonons in Si/Ge superlattices with Ge quantum dots
Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy
Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays
Journal Article
·
Thu Jan 14 23:00:00 EST 2010
· Journal of Experimental and Theoretical Physics
·
OSTI ID:22028282
Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy
Journal Article
·
Wed Nov 30 23:00:00 EST 2005
· Journal of Applied Physics
·
OSTI ID:20714149
Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays
Journal Article
·
Mon Apr 07 00:00:00 EDT 2008
· Applied Physics Letters
·
OSTI ID:21101984