Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (n11)
- V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev 03028 (Ukraine)
We have investigated lateral self-assembling in In{sub 0.4}Ga{sub 0.6}As/GaAs quantum dot (QD) multilayers, which were grown by molecular beam epitaxy on GaAs(100) and (n11)B substrates with n=9,8,7,5,4,3. The lateral self-assembling and the QD size distribution have been studied by atomic force microscopy depending on substrate orientation and the number of periods within the multilayers. The observed two-dimensional ordering can be described by a centered rectangular surface unit cell. Derived autocorrelation functions exhibit the most pronounced lateral QD assembling along the elastically soft directions [1n0]. This can be attributed to elastic interaction, the particular elastic anisotropy of the high index substrates, and the minimization of the strain energy.
- OSTI ID:
- 21013747
- Journal Information:
- Applied Physics Letters, Vol. 91, Issue 17; Other Information: DOI: 10.1063/1.2802567; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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