Optical properties of nanocrystalline SnS{sub 2} thin films
- Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032 (India)
- Department of Physics, National Technical University of Athens, Athens GR157 80 (Greece)
- Microelectronics Group, School of Electronic Engineering, The Queen's University, Belfast BT71NN (United Kingdom)
Thin films of nanocrystalline SnS{sub 2} on glass substrates were prepared from solution by dip coating and then sulfurized in H{sub 2}S (H{sub 2}S:Ar = 1:10) atmosphere. The films had an average thickness of 60 nm and were characterized by X-ray diffraction studies, scanning electron microscopy, EDAX, transmission electron microscopy, UV-vis spectroscopy, and Raman spectroscopy. The influence of annealing temperature (150-300 deg. C) on the crystallinity and particle size was studied. The effect of CTAB as a capping agent has been tested. X-ray diffraction analysis revealed the polycrystalline nature of the films with a preferential orientation along the c-axis. Optical transmission spectra indicated a marked blue shift of the absorption edge due to quantum confinement and optical band gap was found to vary from 3.5 to 3.0 eV with annealing temperature. Raman studies indicated a prominent broad peak at {approx}314 cm{sup -1}, which confirmed the presence of nanocrystalline SnS{sub 2} phase.
- OSTI ID:
- 21000611
- Journal Information:
- Materials Research Bulletin, Vol. 42, Issue 3; Other Information: DOI: 10.1016/j.materresbull.2006.06.028; PII: S0025-5408(06)00285-6; Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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