Probe diagnostics of argon-oxygen-tetramethyltin capacitively coupled plasmas for the deposition of tin oxide thin films

Journal Article · Sun Apr 01 04:00:00 EDT 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2561749· OSTI ID:20982791

Pulpytel, J; Morscheidt, W; Arefi-Khonsari, F ^[1]

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1. Laboratoire de Genie des procedes Plasmas, Ecole Nationale Superieure de Chimie Paris, Universite Pierre et Marie Curie, Paris 6 (France)

Langmuir probe measurements in nondepositing and depositing rf capacitively coupled (CCP) plasmas are briefly reviewed and compared to the results obtained in our rf system used for the deposition of tin oxide (SnO{sub 2}) thin films from argon-oxygen-tetamethyltin [Sn(CH{sub 3}){sub 4}] plasmas. Typically in our experimental conditions for tin oxide deposition, values of kT{sub eff}= 1.2-1.5 eV and n{sub e}=3-5x10{sup 9} cm{sup -3} were measured. These values are consistent with those generally reported in other depositing discharges. The shape of the electron energy probability function (EEPF), obtained from the Druyvesteyn procedure, was discussed too. As a consequence of the two electron heating mechanisms in capacitively coupled discharges, that is, ohmic and stochastic heating, the electrons have a bi-Maxwellian EEPF at low pressure (in the range of 10-100 mTorr). Moreover, a deep 'hole' appears in the EEPF at the energy which could correspond to the resonant peak of the vibrational excitation cross section of some molecules which can be present in the discharge, such as N{sub 2}, CH{sub 4}, or CO.

• OSTI ID: 20982791
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ARGON
CARBON MONOXIDE
CHEMICAL VAPOR DEPOSITION
COATINGS
CROSS SECTIONS
ELECTRONS
EV RANGE 01-10
EXCITATION
HEATING
HIGH-FREQUENCY DISCHARGES
LANGMUIR PROBE
METHANE
OXYGEN
PLASMA
PROBABILITY
RF SYSTEMS
STOCHASTIC PROCESSES
THIN FILMS
TIN OXIDES