Quantitative structural characterization of GaN quantum dot ripening using reflection high-energy electron diffraction

Journal Article · Thu Mar 01 00:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2422902· OSTI ID:20982743

Coraux, J; Favre-Nicolin, V; Renevier, H; Proietti, M G; Amstatt, B; Bellet-Amalric, E; Daudin, B ^[1]

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1. DRFMC, SP2M, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France and Universite Joseph Fourier, BP 53, 38041, Grenoble Cedex 9 (France)

Reflection high-energy electron diffraction (RHEED) was used to monitor the strain of GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy. Quantitative and absolute values of the in- and out-of-plane strains of the QDs were determined and compared to reference values, obtained by x-ray diffraction measurements. A very good agreement was found between RHEED and x-ray measurements. The growth and thermal ripening of the dots were analyzed. A progressive strain relaxation was observed during the ripening stage, suggesting a morphology evolution of the dots.

• OSTI ID: 20982743
• Journal Information: Journal of Applied Physics, Vol. 101, Issue 5; Other Information: DOI: 10.1063/1.2422902; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTRON DIFFRACTION
EVOLUTION
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM DOTS
REFLECTION
RELAXATION
RESIDUAL STRESSES
RIPENING
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION