Formation of silicon nitride nanopillars in dual-frequency capacitively coupled plasma and their application to Si nanopillar etching
- School of Advanced Materials Science and Engineering, and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)
During the etching process of a silicon nitride layer in CH{sub 2}F{sub 2}/H{sub 2}/Ar dual-frequency superimposed capacitively coupled plasmas, CH{sub x}F{sub y} polymer nanodots were formed on the silicon nitride surface and, as a result, silicon nitride nanopillars were fabricated. The H{sub 2} and low frequency power (P{sub LF}) were found to play a critical role in determining the density and diameters of the pillars due to the change in the degree of hydrofluorocarbon polymerization. Silicon nitride nanopillars with a diameter as small as congruent with 25 nm and an aspect ratio as large as congruent with 3.2 were formed, and silicon nanopillars could also be fabricated by the inductively coupled Cl{sub 2}/Ar plasma etching of a Si substrate using the silicon nitride nanopillars as a hard mask.
- OSTI ID:
- 20979463
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 25, Issue 4; Other Information: DOI: 10.1116/1.2713116; (c) 2007 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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