Etching characteristics and application of physical-vapor-deposited amorphous carbon for multilevel resist
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)
For the fabrication of a multilevel resist (MLR) based on a very thin, physical-vapor-deposited (PVD) amorphous carbon (a-C) layer, the etching characteristics of the PVD a-C layer with a SiO{sub x} hard mask were investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in O{sub 2}/N{sub 2}/Ar plasmas: high-frequency/low-frequency combination (f{sub HF}/f{sub LF}), HF/LF power ratio (P{sub HF}/P{sub LF}), and O{sub 2} and N{sub 2} flow rates. The very thin nature of the a-C layer helps to keep the aspect ratio of the etched features low. The etch rate of the PVD a-C layer increased with decreasing f{sub HF}/f{sub LF} combination and increasing P{sub LF} and was initially increased but then decreased with increasing N{sub 2} flow rate in O{sub 2}/N{sub 2}/Ar plasmas. The application of a 30 nm PVD a-C layer in the MLR structure of ArF PR/BARC/SiO{sub x}/PVD a-C/TEOS oxide supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the TEOS-oxide layer.
- OSTI ID:
- 21192390
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 26, Issue 4; Conference: 54. international AVS symposium, Seattle, WA (United States), 14-19 Oct 2007; Other Information: DOI: 10.1116/1.2936231; (c) 2008 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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