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Demonstration of an erbium-doped microdisk laser on a silicon chip

Journal Article · · Physical Review. A
; ; ;  [1]
  1. Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States)
An erbium-doped microlaser is demonstrated utilizing SiO{sub 2} microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's) with intrinsic optical quality factors of up to 6x10{sup 7} and were doped with trivalent erbium ions (peak concentration {approx}3.8x10{sup 20} cm{sup -3}) using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the {sup 4}I{sub 15/2}{yields}{sup 4}I{sub 13/2} erbium transition at 1450 nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550-nm band. Analysis of the pump-output power relation yielded a pump threshold of 43 {mu}W and allowed measuring the spontaneous emission coupling factor: {beta}{approx_equal}1x10{sup -3}.
OSTI ID:
20979319
Journal Information:
Physical Review. A, Journal Name: Physical Review. A Journal Issue: 5 Vol. 74; ISSN 1050-2947; ISSN PLRAAN
Country of Publication:
United States
Language:
English

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