Atomic data and spectral line intensities for Si XI

Journal Article · Thu Mar 15 04:00:00 EDT 2007 · Atomic Data and Nuclear Data Tables

DOI:https://doi.org/10.1016/j.adt.2006.06.002· OSTI ID:20976803

Bhatia, A K ^[1]; Landi, E ^[2]

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1. NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States)
2. ARTEP, Inc., Columbia, MD 21044 (United States) and Naval Research Laboratory Washington, DC 20375 (United States)

Electron impact collision strengths, energy levels, oscillator strengths and spontaneous radiative decay rates are calculated for Si XI. The configurations used are 2s{sup 2}, 2s2p, 2p{sup 2}, 2l3l', 2l4l' and 2s5l', with l = s,p and l' = s,p,d giving rise to 92 fine-structure levels in intermediate coupling. Collision strengths are calculated at five incident energies (35, 70, 105, 140, and 175 Ry) in the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, and R-Matrix results for the 2s{sup 2}, 2s2p, 2p{sup 2} configurations available in the literature, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10{sup 8}-10{sup 14} cm{sup -3} at an electron temperature of log T {sub e}(K) = 6.2, corresponding to the maximum abundance of Si XI. Spectral line intensities are calculated, and their diagnostic relevance is discussed. This dataset will be made available in the next version of the CHIANTI database.

• OSTI ID: 20976803
• Journal Information: Atomic Data and Nuclear Data Tables, Journal Name: Atomic Data and Nuclear Data Tables Journal Issue: 2 Vol. 93; ISSN ADNDAT; ISSN 0092-640X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
APPROXIMATIONS
BOLTZMANN STATISTICS
DISTORTED WAVE THEORY
ELECTRON BEAMS
ELECTRON COLLISIONS
ELECTRON DENSITY
ELECTRON TEMPERATURE
ENERGY LEVELS
EQUATIONS
EQUILIBRIUM
EXCITATION
FINE STRUCTURE
INTERMEDIATE COUPLING
NUCLEAR DATA COLLECTIONS
OSCILLATOR STRENGTHS
R MATRIX
RADIATIVE DECAY
SILICON