Growth of polycrystalline Cu(In,Ga)Se{sub 2} thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Journal Article · Mon Jul 23 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2766669· OSTI ID:20972019

Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru ^[1]

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1. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

Cu(In,Ga)Se{sub 2} (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

• OSTI ID: 20972019
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER SELENIDES
CRYSTAL GROWTH
ENERGY CONVERSION
GALLIUM SELENIDES
GRAIN SIZE
INDIUM SELENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTOVOLTAIC EFFECT
POLYCRYSTALS
RADICALS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
THIN FILMS