Characterization and modeling of reverse-bias breakdown in Cu(In,Ga)Se2 photovoltaic devices
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Bowling Green State Univ., OH (United States)
Partial shading of series-connected thin-film photovoltaic modules can force shaded cells into reverse bias, which can cause rapid and irreversible power loss and reduce the practical module lifespan. Unfortunately, this is a common occurrence in field-deployed modules due to the myriad of environmental factors that can result in partial shading. In this work, we identify as-grown nonuniformities in the Cu(In,Ga)Se2 (CIGS) absorber layers as the points of origin for the damage induced under reverse-bias conditions. The structure and chemistry associated with inclusions and voids in the CIGS films cause these features to act as resistive heating elements in reverse-bias conditions. This localized resistive heating provides the energy required to induce thermal runaway breakdown in the CIGS devices, resulting in damage to charge collection and reduced active area of a device. This mechanism is also described with a robust device model to connect the experimental observations with their physical origins.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1545000
- Alternate ID(s):
- OSTI ID: 1542519
- Report Number(s):
- NREL/JA--5K00-72230
- Journal Information:
- Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 9 Vol. 27; ISSN 1062-7995
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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