Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Journal Article · Mon Jul 09 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2756291· OSTI ID:20972007

Shaleev, M V; Novikov, A V; Yablonskiy, A N; Drozdov, Y N; Lobanov, D N; Krasilnik, Z F; Kuznetsov, O A ^[1]

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1. Institute for Physics of Microstructures RAS, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

The effect of the growth temperature (T{sub g}) on photoluminescence of Ge(Si) self-assembled islands embedded between tensile-strained Si layers was studied. The observed redshift of the photoluminescence peak of the dome islands with a decrease of T{sub g} from 700 to 630 deg. C is associated with an increase of Ge content in the islands and with the suppression of smearing of the strained Si layers. The blueshift of the photoluminescence peak with a decrease of T{sub g} from 630 to 600 deg. C is associated with a change of the type of islands on surface, which is accompanied by a decrease in islands' height.

• OSTI ID: 20972007
• Journal Information: Applied Physics Letters, Vol. 91, Issue 2; Other Information: DOI: 10.1063/1.2756291; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GERMANIUM ALLOYS
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RED SHIFT
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THIN FILMS