Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si{sub 1-x}Ge{sub x} layer
- Russian Academy of Sciences, Institute for the Physics of Microstructures (Russian Federation)
The effect of the predeposition of strained Si{sub 1-x}Ge{sub x} layers (x {<=} 20%) on photoluminescence (PL) of self-assembled Ge(Si)/Si(001) islands is studied. A shift of the PL peak related to dome-shaped islands (domes) to lower energies, with respect to the PL peak related to pyramidal islands is observed; this shift is related to a much larger height of the domes compared to that of pyramids. It is found that, as the Ge content in the Si{sub 1-x}Ge{sub x} layer (x) becomes higher than 0.1, two separate peaks appear in the broad PL band related to the islands; these peaks are attributed to the zero-phonon and phonon-assisted optical transitions in the islands. The appearance of these transitions is caused by a change of the TO-phonon type involved in radiative recombination: a TO{sub Ge-Ge} phonon is replaced by a TO{sub Si-Ge} phonon with a shorter wavelength.
- OSTI ID:
- 21088577
- Journal Information:
- Semiconductors, Vol. 40, Issue 3; Other Information: DOI: 10.1134/S1063782606030158; Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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