Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

Journal Article · Mon Jul 09 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2756293· OSTI ID:20972005

Grandal, J; Sanchez-Garcia, M A; Calleja, E; Luna, E; Trampert, A ^[1]

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1. ISOM, Universidad Politecnica de Madrid, Ciudad Universitaria, s/n, 28040 Madrid, Spain and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, s/n, 28040 Madrid (Spain)

High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin Si{sub x}N{sub y} at the InN nanocolumn/substrate interface because of Si nitridation. The Si{sub x}N{sub y} thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free.

• OSTI ID: 20972005
• Journal Information: Applied Physics Letters, Vol. 91, Issue 2; Other Information: DOI: 10.1063/1.2756293; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CRYSTAL GROWTH
DISLOCATIONS
INDIUM NITRIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITRIDATION
PERIODICITY
ROUGHNESS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY