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Title: Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties

Abstract

Epitaxial LaAlO{sub 3} films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTiO{sub 3} seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAlO{sub 3} films, and the epitaxial relationship of LaAlO{sub 3} with Si is LaAlO{sub 3}(001)(parallel sign)Si(001) and LaAlO{sub 3}[100](parallel sign)Si[110]. The band gap of epitaxial LaAlO{sub 3} films was measured to be 6.5{+-}0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAlO{sub 3} films and Si were determined to be partitioned equally with 2.86{+-}0.05 eV for valence-band offset and 2.52{+-}0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [3]
  1. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
  2. (United States)
  3. (Singapore)
Publication Date:
OSTI Identifier:
20971900
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 18; Other Information: DOI: 10.1063/1.2736277; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; CRYSTAL GROWTH; ENERGY GAP; LANTHANUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; RESOLUTION; SILICON; STRONTIUM TITANATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Mi, Y. Y., Yu, Z., Wang, S. J., Lim, P. C., Foo, Y. L., Huan, A. C. H., Ong, C. K., Freescale Semiconductor, Inc. Tempe, Arizona 85284, Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, and Department of Physics, National University of Singapore, Singapore 117542. Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties. United States: N. p., 2007. Web. doi:10.1063/1.2736277.
Mi, Y. Y., Yu, Z., Wang, S. J., Lim, P. C., Foo, Y. L., Huan, A. C. H., Ong, C. K., Freescale Semiconductor, Inc. Tempe, Arizona 85284, Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, & Department of Physics, National University of Singapore, Singapore 117542. Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties. United States. doi:10.1063/1.2736277.
Mi, Y. Y., Yu, Z., Wang, S. J., Lim, P. C., Foo, Y. L., Huan, A. C. H., Ong, C. K., Freescale Semiconductor, Inc. Tempe, Arizona 85284, Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, and Department of Physics, National University of Singapore, Singapore 117542. Mon . "Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties". United States. doi:10.1063/1.2736277.
@article{osti_20971900,
title = {Epitaxial LaAlO{sub 3} thin film on silicon: Structure and electronic properties},
author = {Mi, Y. Y. and Yu, Z. and Wang, S. J. and Lim, P. C. and Foo, Y. L. and Huan, A. C. H. and Ong, C. K. and Freescale Semiconductor, Inc. Tempe, Arizona 85284 and Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 and Department of Physics, National University of Singapore, Singapore 117542},
abstractNote = {Epitaxial LaAlO{sub 3} films have been grown on Si (001) by molecular beam epitaxy with an ultrathin SrTiO{sub 3} seed layer. High resolution x-ray diffraction and transmission electron microscopy show the high quality epitaxial structure of LaAlO{sub 3} films, and the epitaxial relationship of LaAlO{sub 3} with Si is LaAlO{sub 3}(001)(parallel sign)Si(001) and LaAlO{sub 3}[100](parallel sign)Si[110]. The band gap of epitaxial LaAlO{sub 3} films was measured to be 6.5{+-}0.1 eV from O 1s loss spectra. Band offsets between crystalline LaAlO{sub 3} films and Si were determined to be partitioned equally with 2.86{+-}0.05 eV for valence-band offset and 2.52{+-}0.1 eV for conduction-band offset by using x-ray photoelectron spectroscopy.},
doi = {10.1063/1.2736277},
journal = {Applied Physics Letters},
number = 18,
volume = 90,
place = {United States},
year = {Mon Apr 30 00:00:00 EDT 2007},
month = {Mon Apr 30 00:00:00 EDT 2007}
}