Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions

Chambers, Scott A.; Kaspar, Tiffany C.; Prakash, Abhinav; Haugstad, Greg; Jalan, Bharat

doi:10.1063/1.4946762

Band alignment at epitaxial BaSnO₃/SrTiO₃(001) and BaSnO₃/LaAlO₃(001) heterojunctions

Journal Article · Tue Apr 12 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4946762· OSTI ID:1700691

^[1]; Kaspar, Tiffany C. ^[1]; ^[2]; Haugstad, Greg ^[3]; ^[2]

Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Univ. of Minnesota, Minneapolis, MN (United States)
Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, USA

In this work, we have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO₃ with SrTiO₃(001) and LaAlO₃(001). 28 u.c. BaSnO₃ epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO₃ films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO₃ than in SrTiO₃ and LaAlO₃ by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO₃ by modulation doping, or at the BaSnO₃/LaAlO₃ interface by polarization doping, can be transferred to and at least partially confined in the BaSnO₃ film.

View Accepted Manuscript (DOE)

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States). Environmental Molecular Sciences Laboratory (EMSL)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC05-76RL01830

OSTI ID:: 1700691

Alternate ID(s):: OSTI ID: 22591561
OSTI ID: 1247019

Report Number(s):: PNNL-SA--115710

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 108; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
Band gap
Crystal lattices
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Optical absorption
Optical properties