Damage threshold of inorganic solids under free-electron-laser irradiation at 32.5 nm wavelength

Journal Article · Mon Apr 23 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2734366· OSTI ID:20971885

Hau-Riege, S P; London, R A; Bionta, R M; McKernan, M A; Baker, S L; Krzywinski, J; Sobierajski, R; Nietubyc, R; Pelka, J B; Jurek, M; Juha, L; Chalupsky, J; Cihelka, J; Hajkova, V; Velyhan, A; Krasa, J; Kuba, J; Tiedtke, K; Toleikis, S; Tschentscher, Th ^[1]

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1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

Samples of B{sub 4}C, amorphous C, chemical-vapor-deposition-diamond C, Si, and SiC were exposed to single 25 fs long pulses of 32.5 nm free-electron-laser radiation at fluences of up to 2.2 J/cm{sup 2}. The samples were chosen as candidate materials for x-ray free-electron-laser optics. It was found that the threshold for surface damage is on the order of the fluence required for thermal melting. For larger fluences, the crater depths correspond to temperatures on the order of the critical temperature, suggesting that the craters are formed by two-phase vaporization.

• OSTI ID: 20971885
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
BORON CARBIDES
CHEMICAL VAPOR DEPOSITION
CRITICAL TEMPERATURE
DAMAGE
DIAMONDS
EVAPORATION
FREE ELECTRON LASERS
MELTING
SILICON
SILICON CARBIDES
X-RAY LASERS