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Epitaxial growth of lead zirconium titanate thin films on Ag buffered Si substrates using rf sputtering

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2731515· OSTI ID:20971879
; ;  [1]
  1. Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
Epitaxial lead zirconium titanate (PZT) (001) thin films with a Pt bottom electrode were deposited by rf sputtering onto Si(001) single crystal substrates with a Ag buffer layer. Both PZT(20/80) and PZT(53/47) samples were shown to consist of a single perovskite phase and to have the (001) orientation. The orientation relationship was determined to be PZT(001)[110](parallel sign)Pt(001)[110](parallel sign)Ag(001)[110](parallel sign)Si(001)[110]. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer. The measured remanent polarization P{sub r} and coercive field E{sub c} of the PZT(20/80) thin film were 26 {mu}C/cm{sup 2} and 110 kV/cm, respectively. For PZT(53/47), P{sub r} was 10 {mu}C/cm{sup 2} and E{sub c} was 80 kV/cm.
OSTI ID:
20971879
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 90; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English