skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hall magnetoresistivity response under microwave excitation revisited

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2734506· OSTI ID:20971877
 [1]
  1. Escuela Politecnica Superior, Universidad Carlos III, Leganes, Madrid 28911 (Spain) and Instituto de Ciencia de Materiales, CSIC, Cantoblanco, Madrid 28049 (Spain)

The authors theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when subjected to microwave radiation. The most surprising modification of the Hall magnetoresistivity is a periodic reduction which correlates with a periodic increase in the diagonal resistivity. The authors present a model that explains the experimental results considering that radiation affects directly only the diagonal resistivity and that the observed Hall resistivity changes come from the tensor relationship between them.

OSTI ID:
20971877
Journal Information:
Applied Physics Letters, Vol. 90, Issue 17; Other Information: DOI: 10.1063/1.2734506; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English