Interfacial structures and electrical properties of HfAl{sub 2}O{sub 5} gate dielectric film annealed with a Ti capping layer

Journal Article · Mon Apr 09 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2722665· OSTI ID:20960212

Xinhong, Cheng; Li, Wan; Zhaorui, Song; Yuehui, Yu; Dashen, Shen ^[1]

---

1. Department of Physics, University of Wenzhou, Xueyuan Road 276, Wenzhou 325027 (China)

HfAl{sub 2}O{sub 5} gate dielectric film with an O-gettering Ti capping layer treated with rapid thermal annealing process and its interfacial structure and electrical properties were reported. X-ray reflectivity measurements and x-ray photoelectron spectroscopy suggested that the interfacial layers were composed of a 0.5 nm HfAlSiO layer and a 1.5 nm Si{sub x}(SiO{sub 2}){sub 1-x} (x<1) layer for the as-deposited film. However, for the annealed film, HfAlSiO layer was not found and the 1.5 nm Si{sub x}(SiO{sub 2}){sub 1-x} transformed to a 1 nm SiO{sub 2}. The electrical measurements indicated that the equivalent oxide thickness decreased to 2.9 nm, and the leakage current was only 70 {mu}A/cm{sup 2} at the gate bias of 10 MV/cm for the annealed film.

• OSTI ID: 20960212
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
ANNEALING
DIELECTRIC MATERIALS
ELECTRICAL PROPERTIES
HAFNIUM COMPOUNDS
LAYERS
LEAKAGE CURRENT
REFLECTIVITY
SILICON OXIDES
THIN FILMS
TITANIUM
X-RAY PHOTOELECTRON SPECTROSCOPY