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Title: Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}

Abstract

Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO{sub 2} film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO{sub 2} surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density.

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prospekt Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)
  2. (Germany)
Publication Date:
OSTI Identifier:
20960185
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 90; Journal Issue: 13; Other Information: DOI: 10.1063/1.2719163; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; DEPOSITION; EV RANGE 100-1000; FILMS; GERMANIUM; ION BEAMS; LAYERS; MEMORY DEVICES; MOLECULAR BEAM EPITAXY; MONTE CARLO METHOD; NANOSTRUCTURES; NUCLEATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES

Citation Formats

Stepina, N. P., Dvurechenskii, A. V., Armbrister, V. A., Kesler, V. G., Novikov, P. L., Gutakovskii, A. K., Kirienko, V. V., Smagina, Zh. V., Groetzschel, R., and Forschungszentrum Rossendorf, D-01328 Dresden. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}. United States: N. p., 2007. Web. doi:10.1063/1.2719163.
Stepina, N. P., Dvurechenskii, A. V., Armbrister, V. A., Kesler, V. G., Novikov, P. L., Gutakovskii, A. K., Kirienko, V. V., Smagina, Zh. V., Groetzschel, R., & Forschungszentrum Rossendorf, D-01328 Dresden. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}. United States. doi:10.1063/1.2719163.
Stepina, N. P., Dvurechenskii, A. V., Armbrister, V. A., Kesler, V. G., Novikov, P. L., Gutakovskii, A. K., Kirienko, V. V., Smagina, Zh. V., Groetzschel, R., and Forschungszentrum Rossendorf, D-01328 Dresden. Mon . "Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}". United States. doi:10.1063/1.2719163.
@article{osti_20960185,
title = {Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}},
author = {Stepina, N. P. and Dvurechenskii, A. V. and Armbrister, V. A. and Kesler, V. G. and Novikov, P. L. and Gutakovskii, A. K. and Kirienko, V. V. and Smagina, Zh. V. and Groetzschel, R. and Forschungszentrum Rossendorf, D-01328 Dresden},
abstractNote = {Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO{sub 2} film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO{sub 2} surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density.},
doi = {10.1063/1.2719163},
journal = {Applied Physics Letters},
number = 13,
volume = 90,
place = {United States},
year = {Mon Mar 26 00:00:00 EDT 2007},
month = {Mon Mar 26 00:00:00 EDT 2007}
}