Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO{sub 2}

Journal Article · Mon Mar 26 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2719163· OSTI ID:20960185

Stepina, N P; Dvurechenskii, A V; Armbrister, V A; Kesler, V G; Novikov, P L; Gutakovskii, A K; Kirienko, V V; Smagina, Zh V; Groetzschel, R ^[1]; Forschungszentrum Rossendorf, D-01328 Dresden ^[2]

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1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prospekt Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)
2. Germany

Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO{sub 2} film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO{sub 2} surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density.

• OSTI ID: 20960185
• Journal Information: Applied Physics Letters, Vol. 90, Issue 13; Other Information: DOI: 10.1063/1.2719163; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
DEPOSITION
EV RANGE 100-1000
FILMS
GERMANIUM
ION BEAMS
LAYERS
MEMORY DEVICES
MOLECULAR BEAM EPITAXY
MONTE CARLO METHOD
NANOSTRUCTURES
NUCLEATION
SEMICONDUCTOR MATERIALS
SILICON OXIDES