Effect of energetic ions on the stability of bond-center hydrogen in silicon
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Department of Applied Science, College of William and Mary, Williamsburg, Virginia 23187 (United States)
We report an observation of low-temperature, athermal, ion-induced decay of infrared-active bond-center hydrogen (BCH) in silicon. Specifically, the infrared intensity of BCH is found to decay monotonically as a function of ion dose with a decay constant determined by the electronic energy deposited by each ion. Our data indicate that ion-induced decay of BCH results in a different final configuration when compared to the thermal decay process. These findings provide insight into the structure and stability of hydrogen related defects in silicon, and thus have implications for the reliability of state-of-the-art semiconductor devices, radiation damage, and ion-beam characterization studies of hydrogen containing solids.
- OSTI ID:
- 20951543
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 75, Issue 23; Other Information: DOI: 10.1103/PhysRevB.75.235202; (c) 2007 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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