Thermal Diffusion Barrier for Ag Atoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles

Journal Article · Mon Nov 13 04:00:00 EST 2006 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2401516· OSTI ID:20891835

Tsuji, Hiroshi; Gotoh, Naoyuki; Minotani, Takashi; Ishibashi, Toyotsugu; Gotoh, Yasuhito; Ishikawa, Junzo ^[1]; Arai, Nobutoshi; Okumine, Tetsuya; Adachi, Kouichiro; Kotaki, Hiroshi ^[2]

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1. Department of Electronic Science and Engineering, Kyoto University (Japan)
2. Advanced Technology Research Laboratories, SHARP Corporation (Japan)

We have investigated thermal diffusion behavior of implanted Ag atoms in SiO2 by using a high-resolution RBS method in the formation process of monolayered Ag nanoparticles. Ag atoms were implanted by negative ion implantation at 10 keV with 5x1015 ions/cm2 into the 25 nm-thick SiO2/Si. Samples were annealed at 500 - 800 deg. C for 1 h under Ar gas flow. At annealing temperature of 500 deg. C, implanted Ag atoms distributed at the surface and at a depth corresponded to the calculated profile. It is expected that the surface accumulation of Ag atoms resulted from thermal diffusion of implanted atoms during implantation. At 500 deg. C, the very small peak in concentration was observed at a depth of 22 nm. This means that a diffusion barrier for Ag atoms exits in this depth. The diffused atoms accumulated at this depth. At 700 deg. C, the main peak of concentration was appeared at 20 nm in depth, where FWHM was 7 nm. These results well corresponded to the mono-layered Ag nanocrystals observed by HR-TEM.

• OSTI ID: 20891835
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 866; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANIONS
ANNEALING
ATOMS
DIFFUSION BARRIERS
GAS FLOW
ION IMPLANTATION
KEV RANGE 01-10
LAYERS
NANOSTRUCTURES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SILICON OXIDES
SILVER
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THERMAL DIFFUSION
TRANSMISSION ELECTRON MICROSCOPY